用于形成在半导体衬底的鳍部件上的晶体管的隔离组件

Isolation components for transistors formed on fin features of semiconductor substrates

Abstract

The disclosure relates to isolation components for transistors formed on fin features of semiconductor substrates. In an embodiment, an apparatus includes a substrate including a surface having a planar portion and a fin feature extending in a direction substantially perpendicular to the planar portion and having a thickness less than a thickness of the substrate. The apparatus also includes a first transistor that includes a first gate region formed over the fin feature, a first source region formed from a body of the fin feature, and a first drain region formed from the body of the fin feature. Additionally, the apparatus includes a second transistor that includes a second gate region formed over the fin feature, a second source region formed from the body of the fin feature, and a second drain region formed from the body of the fin feature. Further, the apparatus includes an isolation component formed between the first transistor and the second transistor, where the isolation component has a width less than 30 nm.
本公开涉及用于形成在半导体衬底的鳍部件上的晶体管的隔离组件。在一个实施例中,一种装置包括:衬底,包括表面,该表面包括平坦部分和鳍部件,鳍部件在垂直于平坦部分的方向上延伸并且厚度小于衬底的厚度。该装置还包括第一晶体管,其包括:第一栅极区域,形成在鳍部件上方;第一源极区域,由鳍部件的主体形成;以及第一漏极区域,由鳍部件的主体形成。此外,该装置还包括第二晶体管,其包括:第二栅极区域,形成在鳍部件上方;第二源极区域,由鳍部件的主体形成;以及第二漏极区域,由鳍部件的主体形成。此外,该装置还包括隔离组件,形成在第一晶体管和第二晶体管之间,隔离组件具有小于30nm的宽度。

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