Plasma etching method

等离子体刻蚀方法

Abstract

The invention relates to the technical field of semiconductors and discloses a plasma etching method. The method comprises the following steps: executing one or more times of manufacture procedure circulating steps, wherein the manufacture procedure circulating steps comprise an etching step with bias power and an etching step without the bias power. The execution time and bias power of the two etching steps are adjusted, the problems of bottom roughness, side wall top roughness, side wall angles, top side wall protruding and overhanging and the like of a plasma etching structure are balanced; the bottom/side wall top roughness is reduced, and the top side wall protruding and overhanging problem is eliminated; cavity pressure and the bias power are adjusted in a plasma etching process, and control over a side wall angle of the etching structure is realized, so that the high-quality plasma etching structure with the controllable side wall angle and smaller side wall and bottom surface toughness is obtained according to the requirements of the etching structure.
本发明涉及半导体技术领域,公开了一等离子体刻蚀方法,该方法包括执行一次或多次制程循环步骤,所述制程循环步骤包括:有偏置功率的刻蚀步骤和没有偏置功率的刻蚀步骤。通过对上述两刻蚀步骤执行时间及偏置功率大小的调整,在等离子体刻蚀结构底部粗糙度、侧壁顶部粗糙度、侧壁角度及顶部侧壁突出倒悬等问题之间取得平衡,在降低刻蚀结构底部/侧壁顶部粗糙度、消除顶部侧壁突出倒悬问题的同时,通过等离子体刻蚀过程中腔体压力及偏置功率大小的调整实现对刻蚀结构侧壁角度的控制,从而根据刻蚀结构要求,得到侧壁角度可控、侧壁及底部表面粗糙度较小的高质量等离子体刻蚀结构。

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (6)

    Publication numberPublication dateAssigneeTitle
    CN-102737984-AOctober 17, 2012中微半导体设备(上海)有限公司Semiconductor structure formation method
    CN-102738074-AOctober 17, 2012中微半导体设备(上海)有限公司Method for forming semiconductor structure
    CN-103400762-ANovember 20, 2013中微半导体设备(上海)有限公司半导体结构的形成方法
    JP-H10270419-AOctober 09, 1998Hitachi Ltd, 株式会社日立製作所Plasma etching apparatus and method
    US-2003181067-A1September 25, 2003Sanyo Electric Co., Ltd., Fujitsu LimitedMethod of fabricating semiconductor device having low dielectric constant insulator film
    US-2009078678-A1March 26, 2009Akihiro Kojima, Hisataka Hayashi, Akio UiPlasma processing apparatus and plasma processing method

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle